Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu, Pohang, Gyungbuk 790-784, Republic of Korea.
Nat Commun. 2013;4:1773. doi: 10.1038/ncomms2785.
Controlled alignment and patterning of individual semiconducting nanowires at a desired position in a large area is a key requirement for electronic device applications. High-speed, large-area printing of highly aligned individual nanowires that allows control of the exact numbers of wires, and their orientations and dimensions is a significant challenge for practical electronics applications. Here we use a high-speed electrohydrodynamic organic nanowire printer to print large-area organic semiconducting nanowire arrays directly on device substrates in a precisely, individually controlled manner; this method also enables sophisticated large-area nanowire lithography for nano-electronics. We achieve a maximum field-effect mobility up to 9.7 cm(2) V(-1) s(-1) with extremely low contact resistance (<5.53 Ω cm), even in nano-channel transistors based on single-stranded semiconducting nanowires. We also demonstrate complementary inverter circuit arrays comprising well-aligned p-type and n-type organic semiconducting nanowires. Extremely fast nanolithography using printed semiconducting nanowire arrays provide a simple, reliable method of fabricating large-area and flexible nano-electronics.
在大面积上，将单个半导体纳米线精确地对准并进行图案化到所需位置，是电子器件应用的关键要求。对于实际的电子应用，高速、大面积打印高度对准的单个纳米线，并能够精确控制线的数量、取向和尺寸，是一个重大挑战。在这里，我们使用高速电动力学有机纳米线打印机，以精确、单独控制的方式直接在器件衬底上打印大面积有机半导体纳米线阵列；这种方法还为纳米电子学提供了复杂的大面积纳米线光刻技术。我们实现了高达 9.7 cm² V⁻¹ s⁻¹ 的最大场效应迁移率，并且接触电阻极低（<5.53 Ω cm），即使是基于单链半导体纳米线的纳米通道晶体管也是如此。我们还展示了由良好对准的 p 型和 n 型有机半导体纳米线组成的互补反相器阵列。使用印刷半导体纳米线阵列进行的超快速纳米光刻为制造大面积和柔性纳米电子学提供了一种简单、可靠的方法。
