Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.
Nat Commun. 2012 May 8;3:823. doi: 10.1038/ncomms1818.
Strain engineering has been proposed as an alternative method for manipulating the electronic properties of graphene. However, the bottleneck for strain engineering in graphene has been the ability to control such strain patterns at the nanoscale. Here we show that high level of control can be accomplished by chemically modifying the adherence of graphene on metal. Using scanning tunnelling microscopy, the shape evolution of graphene Moiré blisters towards geometrically well-defined graphene bubbles was studied during the controlled, sub-layer oxidation of the ruthenium substrate. Understanding the dynamics of the oxidation process and defects generation on the Ru substrate allows us to control the size, shape and the density of the bubbles and its associated pseudo-magnetism. We also show that a modification of the same procedure can be used to create antidots in graphene by catalytic reaction of the same nanobubbles.
应变工程被提议作为一种操纵石墨烯电子性质的替代方法。然而，石墨烯中应变工程的瓶颈一直是在纳米尺度上控制这种应变模式的能力。在这里，我们展示了通过化学修饰石墨烯在金属上的附着力，可以实现高度的控制。使用扫描隧道显微镜，研究了在钌基底的受控亚层氧化过程中，石墨烯莫尔超晶格泡的形状演化如何朝着几何上定义良好的石墨烯泡演化。理解氧化过程的动力学和 Ru 基底上缺陷的产生使我们能够控制泡的大小、形状和密度及其相关的赝磁性。我们还表明，通过相同纳米泡的催化反应，可以修改相同的程序来在石墨烯中创建反点。
