School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Nano Lett. 2012 Jul 11;12(7):3472-6. doi: 10.1021/nl300948c. Epub 2012 Jun 15.
High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 × 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm(2)/(V·s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.
高性能、灵活的全石墨烯基薄膜晶体管 (TFT) 是在塑料衬底上制造的，使用石墨烯活性层、氧化石墨烯 (GO) 电介质和石墨烯电极。GO 电介质表现出介电常数 (77 K 时为 3.1)、低泄漏电流 (17 mA/cm(2))、击穿偏压 (1.5 × 10(6) V/cm) 和良好的机械柔韧性。在漏极偏压为 -0.1 V 时，基于石墨烯的 TFT 的空穴和电子迁移率分别为 300 和 250 cm(2)/(V·s)。此外，塑料衬底上的石墨烯 TFT 表现出出色的机械柔韧性和光学透明度。该方法为石墨烯在柔性和可拉伸电子产品中的应用探索了重要的一步。
