Sarkar Kalyan Jyoti, Pal Biswajit, Banerji Pallab
Advanced Technology Development Centre and Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India.
ACS Omega. 2019 Feb 27;4(2):4312-4319. doi: 10.1021/acsomega.8b03301. eCollection 2019 Feb 28.
In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass substrates with two different metals, viz., gold and aluminum, as the source and drain contacts. The performance of the devices was analyzed from their field-effect characteristics. Both the devices showed dominant p-type charge transport behavior. The breakdown electric field was determined to be 1.02 × 10 V/m. The current transport mechanism was explained from the output characteristics using the Fowler-Nordheim tunneling theory. Capacitance-voltage (-) measurements have been employed to determine the value of the oxide capacitance and to examine the memory effect. The hysteresis behavior observed from the - characteristics show the suitability of the device for memory applications with a low operating voltage of 3 V. The charge trapping behavior of GO was explained by the energy band diagram. Frequency-dependent - measurements in the range 100 kHz to 1 MHz were also performed to account for the memory window obtained in the devices. The charge retention and endurance characteristics were evaluated under a constant voltage stress to check the reliability of device operation.
在本报告中，利用氧化石墨烯（GO）的介电性质成功实现了适用于非易失性存储应用的低功耗并五苯薄膜晶体管。在氧化铟锡涂层玻璃基板上，以两种不同的金属（即金和铝）作为源极和漏极触点，制造了两种不同类型的器件。从器件的场效应特性分析其性能。两种器件均表现出主导的p型电荷传输行为。确定击穿电场为1.02×10 V/m。利用福勒-诺德海姆隧穿理论从输出特性解释了电流传输机制。采用电容-电压（-）测量来确定氧化物电容的值并检查记忆效应。从-特性观察到的滞后行为表明该器件适用于工作电压低至3 V的存储应用。通过能带图解释了GO的电荷俘获行为。还在100 kHz至1 MHz范围内进行了频率相关的-测量，以说明器件中获得的记忆窗口。在恒定电压应力下评估电荷保持和耐久性特性，以检查器件操作的可靠性。
