Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA.
Adv Mater. 2012 Jul 10;24(26):3573-6. doi: 10.1002/adma.201200671. Epub 2012 Jun 12.
Solution-processed mechanically flexible resistive random access memories are fabricated using Ag(2)Se nanoparticles; the fabricated Ag/Ag(2)Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 10(5) s, and no degradation in endurance after 10(4) switching cycles, with stable operation even under a mechanical strain of 0.38%.
采用 Ag(2)Se 纳米粒子制备了溶液处理的机械柔性电阻式随机存取存储器; 在柔性聚萘二甲酸乙二醇酯衬底上制造的 Ag/Ag(2)Se/Au 忆阻器件表现出双极开关存储特性，具有低电压(<1.5 V)操作、10(5) s 后无明显的保持损耗以及 10(4) 次开关循环后无耐久性下降，即使在 0.38%的机械应变下也能稳定工作。
