Resistance switching characteristics of solid electrolyte chalcogenide Ag(2)Se nanoparticles for flexible nonvolatile memory applications.

Solution-processed mechanically flexible resistive random access memories are fabricated using Ag(2)Se nanoparticles; the fabricated Ag/Ag(2)Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 10(5) s, and no degradation in endurance after 10(4) switching cycles, with stable operation even under a mechanical strain of 0.38%.