Life Science Center of Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan.
J Am Chem Soc. 2012 Jul 18;134(28):11681-6. doi: 10.1021/ja303660g. Epub 2012 Jul 3.
Fullerene crystals or films have drawn much interest because they are good candidates for use in the construction of electronic devices. The results of theoretical calculations revealed that the conductivity properties of I(h)-C(80) endohedral metallofullerenes (EMFs) vary depending on the encapsulated metal species. We experimentally investigated the solid-state structures and charge-carrier mobilities of I(h)-C(80) EMFs La(2)@C(80), Sc(3)N@C(80), and Sc(3)C(2)@C(80). The thin film of Sc(3)C(2)@C(80) exhibits a high electron mobility μ = 0.13 cm(2) V(-1) s(-1) under normal temperature and atmospheric pressure, as determined using flash-photolysis time-resolved microwave conductivity measurements. This electron mobility is 2 orders of magnitude higher than the mobility of La(2)@C(80) or Sc(3)N@C(80).
富勒烯晶体或薄膜因其可能被用于电子器件的构建而受到广泛关注。理论计算结果表明，I(h)-C(80) 笼内金属富勒烯（EMF）的导电性取决于所封装的金属种类。我们通过实验研究了 I(h)-C(80) EMF La(2)@C(80)、Sc(3)N@C(80) 和 Sc(3)C(2)@C(80) 的固态结构和载流子迁移率。使用闪光光解时间分辨微波电导率测量法，在常温常压下，Sc(3)C(2)@C(80) 的薄膜表现出高电子迁移率 μ = 0.13 cm(2) V(-1) s(-1)，这比 La(2)@C(80) 或 Sc(3)N@C(80) 的迁移率高出 2 个数量级。
