Pernice Wolfram H P, Xiong Chi, Tang Hong X
Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA.
Opt Express. 2012 May 21;20(11):12261-9. doi: 10.1364/OE.20.012261.
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality optical resonators. In the telecoms C-band (1520-1580 nm), we obtain the highest optical Q factor of 440,000. Critical coupled devices show extinction ratio above 30 dB. For visible wavelengths (around 770 nm), intrinsic quality factors in excess of 30,000 is demonstrated. Our work illustrates the potential of AlN as a low loss material for wideband optical applications.
我们展示了在溅射沉积的氮化铝(AlN)薄膜中的宽带集成光子电路。在近红外和可见光波长下,我们在集成波导中实现了低传播损耗,并实现了高质量的光学谐振器。在电信C波段(1520 - 1580纳米),我们获得了高达440,000的最高光学品质因数。临界耦合器件的消光比高于30分贝。对于可见光波长(约770纳米),展示了超过30,000的本征品质因数。我们的工作说明了AlN作为宽带光学应用的低损耗材料的潜力。