Sanchez Dorian, Cerutti Laurent, Tournié Eric
Institut d'Electronique du Sud, Université Montpellier 2, CNRS, UMR 5214, Place Eugène Bataillon, CC067, F-34095 Cedex 5, Montpellier France.
Opt Express. 2012 Jul 2;20(14):15540-6. doi: 10.1364/OE.20.015540.
We report on the fabrication and performances of an electrically-pumped GaSb monolithic VCSEL, i.e. ,a VCSEL with two epitaxial Bragg mirrors. Selective lateral etching of a tunnel junction is used to provide current and optical confinement. Laser devices with a 6 µm tunnel-junction effective diameter operate at 2.3 µm in CW up to 70 °C, with a threshold current as low as 1.9 mA at 30 °C. The laser emission is single mode with a SMSR near 25 dB and mode-hop-free electro-thermal tunability around 14 nm. This is the first demonstration of a single-mode electrically-pumped monolithic GaSb-based VCSEL.
我们报道了一种电泵浦GaSb单片垂直腔面发射激光器(VCSEL)的制备及其性能,即一种带有两个外延布拉格反射镜的VCSEL。采用隧道结的选择性横向蚀刻来实现电流和光限制。隧道结有效直径为6 µm的激光器件在连续波模式下可在高达70 °C的温度下工作于2.3 µm波长,在30 °C时阈值电流低至1.9 mA。激光发射为单模,边模抑制比(SMSR)接近25 dB,并且具有约14 nm的无模式跳变电热可调性。这是首次展示基于GaSb的单模电泵浦单片VCSEL。