半导体响应的温度与剂量率依赖性之间的相关性；累积剂量的影响。

Correlation between temperature and dose rate dependence of semiconductor response; influence of accumulated dose.

作者信息

Van Dam J, Leunens G, Dutreix A

机构信息

Department of Radiotherapy, University Hospital St. Rafaël, Leuven, Belgium.

出版信息

Radiother Oncol. 1990 Dec;19(4):345-51. doi: 10.1016/0167-8140(90)90035-u.

DOI:10.1016/0167-8140(90)90035-u

PMID:2284444

Abstract

The temperature and dose per pulse dependence of 20 Therados semiconductor detectors have been investigated. The rise in relative response observed when increasing temperature from 20 degree C to 32 degree C ranges between 1.00 and 1.07, that observed when increasing dose per pulse from 9.8 x 10(-6) to 6.5 x 10(-4) Gy/pulse between 1.01 and 1.11. The diodes with the most pronounced dose per pulse dependence have also the most pronounced temperature dependence. Accumulated dose has been found to increase both temperature and dose per pulse dependence until a level off dose (less than 4 kGy for one of the diodes) is reached. However, no level off has been observed concerning sensitivity decrease with dose: after an accumulated dose of 29 kGy a sensitivity decrease of 65% was still observed when giving another 25 kGy to one of the diodes.

摘要

已对20个Therados半导体探测器的温度和每脉冲剂量依赖性进行了研究。温度从20℃升高到32℃时观察到的相对响应上升范围在1.00至1.07之间，每脉冲剂量从9.8×10⁻⁶增加到6.5×10⁻⁴ Gy/脉冲时观察到的相对响应上升范围在1.01至1.11之间。每脉冲剂量依赖性最明显的二极管其温度依赖性也最明显。已发现累积剂量会增加温度和每脉冲剂量依赖性，直至达到一个平稳剂量水平（其中一个二极管小于4 kGy）。然而，未观察到灵敏度随剂量下降而达到平稳：在累积剂量达到29 kGy后，当再给其中一个二极管施加25 kGy剂量时，仍观察到灵敏度下降了65%。