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高温下使用 PEEK 纳米棒阵列制造纳米多孔表面:以 SiNx 为例。

The use of PEEK nanorod arrays for the fabrication of nanoporous surfaces under high temperature: SiNx example.

机构信息

Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, Tres Cantos, E-28760, Madrid, Spain.

出版信息

Nanoscale. 2012 Sep 21;4(18):5608-13. doi: 10.1039/c2nr30885a. Epub 2012 Aug 2.

DOI:10.1039/c2nr30885a
PMID:22854871
Abstract

Large area silicon nitride (SiN(x)) nanoporous surfaces are fabricated using poly(ether-ether-ketone) (PEEK) nanorod arrays as a template. The procedure involves manipulation of nanoporous anodic aluminum oxide (AAO) templates in order to form an ordered array of PEEK nanopillars with high temperature resistant characteristics. In this context, self-ordered AAO templates are infiltrated with PEEK melts via the "precursor film" method. Once the melts have been crystallized in the porous structure of AAO, the basis alumina layer is removed, yielding an ordered array of PEEK nanopillars. The resulting structure is a high temperature and chemical resistant polymeric nanomold, which can be utilized in the synthesis of nanoporous materials under aggressive conditions. Such conditions are high temperatures (up to 320 °C), vacuum, or extreme pH. For example, SiN(x) nanopore arrays have been grown by plasma enhanced chemical vapor deposition at 300 °C, which can be of interest as mold for nanoimprint lithography, due to its hardness and low surface energy. The SiN(x) nanopore array portrays the same characteristics as the original AAO template: 120 nm diameter pores and an interpore distance of 430 nm. Furthermore, the aspect ratio of the SiN(x) nanopores can be tuned by selecting an AAO template with appropriate conditions. The use of PEEK as a nanotemplate extends the applicability of polymeric nanopatterns into a temperature regime up to now not accessible and opens up the simple fabrication of novel nanoporous inorganic surfaces.

摘要

使用聚醚醚酮 (PEEK) 纳米棒阵列作为模板,制备大面积氮化硅 (SiN(x)) 纳米多孔表面。该过程涉及操纵纳米多孔阳极氧化铝 (AAO) 模板,以形成具有耐高温特性的有序 PEEK 纳米柱阵列。在这种情况下,自组装 AAO 模板通过“前体膜”方法渗透 PEEK 熔体。一旦熔体在 AAO 的多孔结构中结晶,基础氧化铝层被去除,得到有序的 PEEK 纳米柱阵列。所得结构是一种耐高温和耐化学腐蚀的聚合物纳米模具,可用于在苛刻条件下合成纳米多孔材料。这些条件包括高温(高达 320°C)、真空或极端 pH 值。例如,已经通过在 300°C 下进行等离子体增强化学气相沉积来生长 SiN(x) 纳米孔阵列,由于其硬度和低表面能,它可以作为纳米压印光刻的模具而引起关注。SiN(x) 纳米孔阵列呈现出与原始 AAO 模板相同的特征:120nm 直径的孔和 430nm 的孔间距离。此外,通过选择具有适当条件的 AAO 模板,可以调整 SiN(x) 纳米孔的纵横比。将 PEEK 用作纳米模板将聚合物纳米图案的适用性扩展到迄今为止无法达到的温度范围,并开辟了新型纳米多孔无机表面的简单制造途径。

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