Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
Nanoscale. 2013 Oct 21;5(20):9666-70. doi: 10.1039/c3nr01899g.
Two-dimensional (2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide (MoS2), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of layered metal chalcogenides (LMCs) and to identify possible compounds with high performance. Here we report the fabrication of high-performance top-gated field-effect transistors (FETs) and related logic gates from monolayer tin disulfide (SnS2), a non-transition metal dichalcogenide. The measured carrier mobility of our monolayer devices reaches 50 cm(2) V(-1) s(-1), much higher than that of the back-gated counterparts (~1 cm(2) V(-1) s(-1)). Based on a direct-coupled FET logic technique, advanced Boolean logic gates and operations are also implemented, with a voltage gain of 3.5 and output swing of >90% for the NOT and NOR gates, respectively. The superior electrical and integration properties make monolayer SnS2 a strong candidate for next-generation atomic electronics.
二维（2D）层状半导体由于其显著的尺寸和机械性能，非常适合于后硅时代的超薄通道和柔性电子。除了第一个被认可的二维半导体二硫化钼（MoS2）外，探索广泛的层状金属硫属化物（LMC）并确定具有高性能的可能化合物也很重要。在这里，我们报告了由单层二硫化锡（SnS2），一种非过渡金属二硫属化物，制造的高性能顶栅场效应晶体管（FET）和相关逻辑门。我们的单层器件的测量载流子迁移率达到 50 cm(2) V(-1) s(-1)，远高于背栅器件 (~1 cm(2) V(-1) s(-1))。基于直接耦合 FET 逻辑技术，还实现了先进的布尔逻辑门和操作，NOT 和 NOR 门的电压增益分别为 3.5 和输出摆幅大于 90%。优异的电气和集成性能使单层 SnS2 成为下一代原子电子学的有力候选者。
