Shin Dong-Ho, You Young Gyu, Jo Sung Il, Jeong Goo-Hwan, Campbell Eleanor E B, Chung Hyun-Jong, Jhang Sung Ho
School of Physics, Konkuk University, Seoul 05029, Korea.
Department of Advanced Materials Science and Engineering, Kangwon National University, Chuncheon 24341, Korea.
Nanomaterials (Basel). 2022 Oct 28;12(21):3820. doi: 10.3390/nano12213820.
The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.
最近关于p型石墨烯（Gr）/碳纳米管（CNT）势垒二极管的报告促进了石墨烯势垒二极管在互补逻辑器件制造中的应用。在此，展示了一种将p型Gr/CNT势垒二极管与n型Gr/MoS2势垒二极管相结合的互补反相器，并报告了其特性。在等效氧化层厚度（EOT）约为15nm时，演示了一个亚纳瓦（~0.2nW）低功耗反相器，其增益适中，为2.5。与基于场效应晶体管的反相器相比，在大得多的EOT下实现了亚纳瓦的功耗，这归因于Gr势垒二极管优异的开关特性。
