Nanophotonics Technology Center, Universitat Politècnica de Valencia, Valencia, Spain.
Opt Lett. 2012 Sep 1;37(17):3504-6. doi: 10.1364/OL.37.003504.
In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon slow wave modulator based on a traveling-wave Mach-Zehnder interferometer with two 500 μm long slow wave phase shifters. 40 Gb/s operation with 6.6 dB extinction ratio at quadrature and with an on-chip insertion loss of only 6 dB is shown. These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect.
在这封信件中，我们展示了一种基于具有两个 500μm 长慢波相移器的行波马赫-曾德尔干涉仪的高效、紧凑、高对比度和低损耗硅慢波调制器。在正交状态下以 6.6dB 的消光比实现了 40Gb/s 的操作，并且芯片插入损耗仅为 6dB。这些结果证实了慢光作为一种增强基于等离子体色散效应的硅调制器性能的手段的好处。
