Labbani R, Serrar H, Benazzouz C
Département de Physique, Faculté des Sciences Exactes, Université Mentouri de Constantine, Route de Aïn El Bey, 25000 Constantine, Algérie.
J Nanosci Nanotechnol. 2012 Aug;12(8):6864-8. doi: 10.1166/jnn.2012.4562.
In this work, we study the effect of annealing and ageing treatments on the behavior of antimony atoms implanted in Si(111) targets. The ion implantation was performed at 120 keV energy to a dose of 2.3 x 10(15) Sb+ cm(-2). Concerning the annealing treatment, it has been carried out at 900 degrees C during 30 minutes (under vacuum). The samples have been analyzed in two steps: immediately after their elaboration and after an ageing period of 4 years and 4 months. Several techniques have been applied for samples analysis: Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD) and electrical measurements. Before the ageing period, a good recovery of radiation damage has been obtained and degrees 50% of the dopant was redistributed into substitutional silicon sites. However, degrees 22% of antimony has been lost from the Si substrates. After the ageing period, the fraction of substituted atoms remained unchanged but a quantity of approximately 20% has again been lost from the specimens. This quantity provided from antimony atoms which remained into irregular positions of Si lattice.
在这项工作中，我们研究了退火和时效处理对注入到Si(111)靶中的锑原子行为的影响。离子注入在120 keV能量下进行，剂量为2.3×10¹⁵ Sb⁺ cm⁻²。关于退火处理，是在900℃下进行30分钟（在真空中）。样品分两步进行分析：在制备后立即以及在4年4个月的时效期后。已对样品应用了几种分析技术：卢瑟福背散射光谱法（RBS）、X射线衍射（XRD）和电学测量。在时效期之前，已获得了良好的辐射损伤恢复，约50%的掺杂剂重新分布到替代硅位点中。然而，22%的锑已从硅衬底中损失。在时效期之后，替代原子的比例保持不变，但约20%的量再次从样品中损失。该量来自保留在硅晶格不规则位置的锑原子。
