Ismail M Y A, Abdalla Z A Y, Njoroge E G, Hlatshwayo T T, Malherbe J B, Innocent A J, Elnour Huzifa M A M
Department of Physics, University of Pretoria, Pretoria, 0002, South Africa; Department of Physics, University of Zalingei, Zalingei, 63314, Central Darfur, Sudan.
Department of Physics, University of Pretoria, Pretoria, 0002, South Africa.
Appl Radiat Isot. 2024 Apr;206:111239. doi: 10.1016/j.apradiso.2024.111239. Epub 2024 Feb 22.
The effect of implantation temperature on the migration behaviour of xenon (Xe) implanted into glassy carbon and the effect of annealing on radiation damage retained by ion implantation were investigated. Glassy carbon substrates were implanted with 320 keV Xe to a fluence of 2 × 10 cm. The implantation process was performed at room temperature (RT) and 100 °C Some of the as-implanted samples were isochronally annealed in vacuum at temperatures ranging from 300 °C to 700 °C in steps of 100 °C for 10 h. The as-implanted and annealed samples were characterized using Rutherford backscattering spectrometry (RBS) and Raman spectroscopy. The RT implanted depth profiles indicated that the migration of Xe towards the surface of glassy carbon was accompanied by a loss of Xe ions. The samples implanted at 100 °C indicated no diffusion or loss of Xe after annealing at 300 °C. However, annealing at temperatures ranging from 400 °C to 700 °C resulted in a slight shift in the Xe profile tail-end towards the bulk of glassy carbon. The diffusion coefficients (D) in the temperature range of 300 °C-700 °C for the RT and 100 °C implanted samples, activation energies (E), and pre-exponential factors (D), were extracted. The values of D ranged from (9.72 ± 0.48) × 10 to (1.87 ± 0.09) × 10 m/s with an activation energy of (6.25 ± 0.31) × 10 eV for RT implanted samples, and the samples implanted at 100 °C, D ranged from (3.85 ± 0.19) × 10 to (6.96 ± 0.34) × 10 m/s with activation energy of (4.10 ± 0.02) × 10 eV. The Raman analysis revealed that implantation at the RT amorphised the glassy carbon structure while the samples implanted at 100 °C showed mild damage compared to RT implantation. Annealing of the RT-implanted sample resulted in some recovery of the damaged region as a function of increasing annealing temperature.
研究了注入温度对注入到玻璃碳中的氙（Xe）迁移行为的影响以及退火对离子注入后保留的辐射损伤的影响。用320 keV的Xe将玻璃碳衬底注入到通量为2×10 cm的剂量。注入过程在室温（RT）和100°C下进行。一些注入后的样品在真空中以100°C的步长在300°C至700°C的温度下进行等时退火10小时。使用卢瑟福背散射光谱（RBS）和拉曼光谱对注入后的样品和退火后的样品进行表征。室温注入深度分布表明，Xe向玻璃碳表面的迁移伴随着Xe离子的损失。在100°C注入的样品在300°C退火后未显示Xe的扩散或损失。然而，在400°C至700°C的温度下退火导致Xe分布尾部向玻璃碳本体略有移动。提取了室温及100°C注入样品在300°C - 700°C温度范围内的扩散系数（D）、活化能（E）和预指数因子（D）。室温注入样品的D值范围为(9.72±0.48)×10至(1.87±0.09)×10 m/s，活化能为(6.25±0.31)×10 eV，而在100°C注入的样品，D值范围为(3.85±0.19)×10至(6.96±0.34)×10 m/s，活化能为(4.10±0.02)×10 eV。拉曼分析表明，室温注入使玻璃碳结构非晶化，而与室温注入相比，100°C注入的样品显示出轻微损伤。室温注入样品的退火导致受损区域随着退火温度的升高而有所恢复。
