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非晶态C/Ni多层膜对绝缘体上多层石墨烯的Ni诱导层交换的影响

Impact of Amorphous-C/Ni Multilayers on Ni-Induced Layer Exchange for Multilayer Graphene on Insulators.

作者信息

Murata Hiromasa, Saitoh Noriyuki, Yoshizawa Noriko, Suemasu Takashi, Toko Kaoru

机构信息

Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan.

Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569, Japan.

出版信息

ACS Omega. 2019 Aug 20;4(10):14251-14254. doi: 10.1021/acsomega.9b01708. eCollection 2019 Sep 3.

Abstract

Layer exchange growth of amorphous carbon (a-C) is a unique technique for fabricating high-quality multilayer graphene (MLG) on insulators at low temperatures. We investigated the effects of the a-C/Ni multilayer structure on the quality of MLG formed by Ni-induced layer exchange. The crystal quality and electrical conductivity of MLG improved dramatically as the number of a-C/Ni multilayers increased. A 600 °C-annealed sample in which 15 layers of 4-nm-thick a-C and 0.5-nm-thick Ni were laminated recorded an electrical conductivity of 1430 S/cm. This value is close to that of highly oriented pyrolytic graphite synthesized at approximately 3000 °C. This improvement is likely related to the bond weakening in a-C due to the screening effect of Ni. We expect that these results will contribute to low-temperature synthesis of MLG using a solid-phase reaction with metals.

摘要

非晶碳(a-C)的层交换生长是一种在低温下在绝缘体上制备高质量多层石墨烯(MLG)的独特技术。我们研究了a-C/Ni多层结构对由Ni诱导的层交换形成的MLG质量的影响。随着a-C/Ni多层的数量增加,MLG的晶体质量和电导率显著提高。一个600℃退火的样品,其中层叠了15层4nm厚的a-C和0.5nm厚的Ni,其电导率记录为1430 S/cm。该值接近在约3000℃合成的高度取向热解石墨的值。这种改善可能与由于Ni的屏蔽效应导致的a-C中的键弱化有关。我们期望这些结果将有助于使用与金属的固相反应进行MLG的低温合成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/baf9/6733173/12b8ac2de361/ao9b01708_0001.jpg

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