Rodríguez-Villanueva Sandra, Mendoza Frank, Instan Alvaro A, Katiyar Ram S, Weiner Brad R, Morell Gerardo
Department of Physics, College of Natural Science, Rio Piedras Campus, University of Puerto Rico, San Juan, PR 00925, USA.
Molecular Sciences Research Center, University of Puerto Rico, San Juan, PR 00927, USA.
Nanomaterials (Basel). 2021 Dec 30;12(1):109. doi: 10.3390/nano12010109.
We report the first direct synthesis of graphene on SiO/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.
我们报道了通过热丝化学气相沉积法在SiO/Si上首次直接合成石墨烯。石墨烯沉积是在低压（35托）下进行的，使用甲烷/氢气混合物，衬底温度为970°C，随后自然冷却至室温。在SiO/Si衬底中间沉积了一条薄铜带作为催化材料。拉曼光谱映射和原子力显微镜测量表明，在整个SiO/Si衬底上生长了几层石墨烯，远远超出了薄铜带的范围，而X射线光电子能谱和能量色散X射线能谱显示，在最初沉积的铜带旁边铜的含量可以忽略不计。通过拉曼光谱和扫描电子显微镜估计了石墨烯纳米晶体的尺寸。
