Gupta Gaurav, Jalil Mansoor Bin Abdul, Liang Gengchiau
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576.
Sci Rep. 2014 Oct 30;4:6838. doi: 10.1038/srep06838.
Three-dimensional (3D) topological insulator (TI) has been conjectured as an emerging material to replace copper (Cu) as an interconnect material because of the suppression of elastic scattering from doping and charge impurities for carrier transport on TI surface. We, therefore via full real-space simulation, examine the feasibility of using thin 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport through Non-Equilibrium Green Function algorithm. We found that because of the scattering induced by the acoustic phonons, the mobility reduces considerably at the room temperature which complemented with the low density of states near Dirac-point does not position Bi2Se3 3D-TI as a promising material to replace Cu for local interconnects. Properties required in suitable TI material for this application have also been discussed.
三维（3D）拓扑绝缘体（TI）已被推测为一种新兴材料，因其能抑制TI表面载流子传输中掺杂和电荷杂质引起的弹性散射，有望取代铜（Cu）作为互连材料。因此，我们通过全实空间模拟，利用非平衡格林函数算法模拟量子输运，研究了在存在边缘粗糙度、空位、声子和电荷杂质的情况下，使用薄3D-TI（Bi2Se3）线进行局部电互连在不同温度和费米能级下的可行性。我们发现，由于声子引起的散射，室温下迁移率大幅降低，再加上狄拉克点附近的低态密度，使得Bi2Se3 3D-TI作为取代Cu用于局部互连的有前景材料并不合适。本文还讨论了适用于该应用的TI材料所需的特性。
