Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Nano Lett. 2012 Oct 10;12(10):5148-54. doi: 10.1021/nl303201w. Epub 2012 Sep 26.
We imaged nanoscale lattice strain in a multilayer semiconductor device prototype with a new X-ray technique, nanofocused Bragg projection ptychography. Applying this technique to the epitaxial stressor layer of a SiGe-on-SOI structure, we measured the internal lattice behavior in a targeted region of a single device and demonstrated that its internal strain profile consisted of two competing lattice distortions. These results provide the strongest nondestructive test to date of continuum modeling predictions of nanoscale strain distributions.
我们使用一种新的 X 射线技术——纳米聚焦布拉格投影叠层术，对多层半导体器件原型中的纳米级晶格应变进行成像。将该技术应用于 SOI 上的 SiGe 外延应变量层，我们测量了单个器件的一个目标区域的内部晶格行为，并证实其内部应变分布由两种相互竞争的晶格畸变组成。这些结果为纳米级应变分布的连续体模型预测提供了迄今为止最强的非破坏性测试。
