School of Physics, University of New South Wales, Sydney, Australia.
Phys Rev Lett. 2012 Aug 17;109(7):076101. doi: 10.1103/PhysRevLett.109.076101. Epub 2012 Aug 13.
To understand the atomistic doping process of phosphorus in germanium, we present a combined scanning tunneling microscopy, temperature programed desorption, and density functional theory study of the reactions of phosphine with the Ge(001) surface. Combining experimental and theoretical results, we demonstrate that PH(2) + H with a footprint of one Ge dimer is the only product of room temperature chemisorption. Further dissociation requires thermal activation. At saturation coverage, PH(2) + H species self-assemble into ordered patterns leading to phosphorus coverages of up to 0.5 monolayers.
为了理解磷在锗中的原子级掺杂过程，我们进行了一项结合扫描隧道显微镜、程序升温脱附以及密度泛函理论的研究，以探究磷化氢与锗（001）表面的反应。综合实验和理论结果，我们证明了室温下化学吸附的唯一产物是具有一个锗二聚体足迹的 PH(2) + H。进一步的离解需要热激活。在饱和覆盖度下，PH(2) + H 物种自组装成有序图案，导致磷的覆盖度达到 0.5 单层。
