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用光镜探测石墨烯晶界。

Probing graphene grain boundaries with optical microscopy.

机构信息

Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, South Korea.

出版信息

Nature. 2012 Oct 11;490(7419):235-9. doi: 10.1038/nature11562. Epub 2012 Oct 3.

DOI:10.1038/nature11562
PMID:23034653
Abstract

Grain boundaries in graphene are formed by the joining of islands during the initial growth stage, and these boundaries govern transport properties and related device performance. Although information on the atomic rearrangement at graphene grain boundaries can be obtained using transmission electron microscopy and scanning tunnelling microscopy, large-scale information regarding the distribution of graphene grain boundaries is not easily accessible. Here we use optical microscopy to observe the grain boundaries of large-area graphene (grown on copper foil) directly, without transfer of the graphene. This imaging technique was realized by selectively oxidizing the underlying copper foil through graphene grain boundaries functionalized with O and OH radicals generated by ultraviolet irradiation under moisture-rich ambient conditions: selective diffusion of oxygen radicals through OH-functionalized defect sites was demonstrated by density functional calculations. The sheet resistance of large-area graphene decreased as the graphene grain sizes increased, but no strong correlation with the grain size of the copper was revealed, in contrast to a previous report. Furthermore, the influence of graphene grain boundaries on crack propagation (initialized by bending) and termination was clearly visualized using our technique. Our approach can be used as a simple protocol for evaluating the grain boundaries of other two-dimensional layered structures, such as boron nitride and exfoliated clays.

摘要

石墨烯中的晶界是在初始生长阶段由岛的连接形成的,这些晶界控制着输运性质和相关器件性能。尽管可以使用透射电子显微镜和扫描隧道显微镜获得关于石墨烯晶界原子重排的信息,但关于石墨烯晶界分布的大规模信息不容易获得。在这里,我们使用光学显微镜直接观察大面积石墨烯(在铜箔上生长)的晶界,而无需转移石墨烯。这种成像技术是通过选择性地氧化铜箔来实现的,方法是在富含湿气的环境条件下用紫外线辐照功能化石墨烯晶界,生成 O 和 OH 自由基:通过密度泛函计算证明了氧自由基通过 OH 功能化缺陷位的选择性扩散。大面积石墨烯的面电阻随着石墨烯晶粒尺寸的增加而降低,但与之前的报道相反,与铜的晶粒尺寸没有很强的相关性。此外,我们的技术可以清楚地观察到石墨烯晶界对裂纹扩展(由弯曲引发)和终止的影响。我们的方法可作为评估其他二维层状结构(如氮化硼和剥离粘土)晶界的简单方案。

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