Croft Zacary L, Valenzuela Oscar, Thompson Connor, Whitfield Brendan, Betzko Garrett, Liu Guoliang
Department of Chemistry, Virginia Tech, Blacksburg, Virginia 24061, United States.
Division of Nanoscience, Academy of Integrated Science, Virginia Tech, Blacksburg, Virginia 24061, United States.
ACS Appl Nano Mater. 2024 Dec 12;7(24):28829-28840. doi: 10.1021/acsanm.4c06372. eCollection 2024 Dec 27.
The transfer of large-area, continuous, chemical vapor deposition (CVD)-grown graphene without introducing defects remains a challenge for fabricating graphene-based electronics. Polymer thin films are commonly used as supports for transferring graphene, but they typically require thermal annealing before transfer. However, little work has been done to thoroughly investigate how thermal annealing affects the polymer/graphene thin film when directly annealed on the growth substrate. In this work, we demonstrate that under improper annealing conditions, thermal annealing of poly(ether imide)/single-layer graphene (PEI/SLG) thin films on Cu causes detrimental nanoscale structural deformations, which permanently degrade the mechanical properties. Furthermore, we elucidate the mechanisms of PEI/SLG deformation during thermal annealing and find that permanent deformations and cracking are caused by Cu substrate oxidation. This study provides an understanding of annealing-induced deformation in polymer/graphene thin films. We anticipate that this knowledge will be useful for further developing defect-free, graphene-based thin film electronics.
在不引入缺陷的情况下转移大面积、连续的化学气相沉积(CVD)生长的石墨烯,对于制造基于石墨烯的电子产品而言仍是一项挑战。聚合物薄膜通常用作转移石墨烯的支撑体,但它们在转移前通常需要进行热退火。然而,对于在生长衬底上直接进行热退火时,热退火如何影响聚合物/石墨烯薄膜,目前尚未开展大量深入研究。在这项工作中,我们证明在不适当的退火条件下,聚醚酰亚胺/单层石墨烯(PEI/SLG)薄膜在铜上进行热退火会导致有害的纳米级结构变形,从而永久性地降低其机械性能。此外,我们阐明了热退火过程中PEI/SLG变形的机制,发现永久性变形和开裂是由铜衬底氧化引起的。本研究有助于理解聚合物/石墨烯薄膜中退火诱导的变形。我们预计这一知识将有助于进一步开发无缺陷的基于石墨烯的薄膜电子产品。