Castán-Guerrero C, Sesé J, Bartolomé J, Bartolomé F, Herrero-Albillos J, Kronast F, Strichovanec P, Merazzo K J, Vázquez M, Vavassori P, García L M
Instituto de Ciencia de Materiales de Aragón (ICMA) and Departamento de Física de la Materia Condensada, Consejo Superior de Investigaciones Científicas-Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain.
J Nanosci Nanotechnol. 2012 Sep;12(9):7437-41. doi: 10.1166/jnn.2012.6537.
We have performed an experimental study on the influence of a ferromagnetic continuous film in the magnetization reversal processes in discrete submicrometric antidot arrays fabricated on it. In order to compare the magnetic properties, two sets of antidot arrays have been fabricated over a cobalt thin film: embedded in the continuous film, and isolated by a trench surrounding the array. X-ray photoemission electron microscopy images of the virgin state show the same magnetic domain distribution in both sets of samples, finding no evidence of any effect of the surrounding film. This result is supported by the hysteresis loops measured with magneto-optical Kerr effect, as isolated and non-isolated arrays present almost coincident loops. A huge increase of the coercivity of the film is achieved, and the expected dependence on the geometrical parameters of the array is found, connecting the previous studies on the micro- and nanometric scales.
我们对铁磁连续薄膜对其上制备的离散亚微米级反点阵阵列磁化反转过程的影响进行了实验研究。为了比较磁性能,在钴薄膜上制备了两组反点阵阵列:嵌入连续薄膜中,以及通过围绕阵列的沟槽与连续薄膜隔离。原始状态的X射线光电子能显微镜图像显示两组样品中的磁畴分布相同,未发现周围薄膜有任何影响的证据。用磁光克尔效应测量的磁滞回线也支持了这一结果,因为隔离和未隔离的阵列呈现出几乎重合的磁滞回线。实现了薄膜矫顽力的大幅增加,并发现了矫顽力对阵列几何参数的预期依赖性,将之前在微米和纳米尺度上的研究联系了起来。