Fernández E, Svalov A V, García-Arribas A, Feuchtwanger J, Barandiaran J M, Kurlyandskaya G V
Departamento de Electricidad y Electrónica, Universidad del País Vasco UPV-EHU, 48940 Leioa, Spain.
J Nanosci Nanotechnol. 2012 Sep;12(9):7496-500. doi: 10.1166/jnn.2012.6545.
Magnetic [FeNi (170 nm)/Ti (6 nm)]3/Cu (L(cu) = 250 or 500 nm)/[Ti (6 nm)/FeNi (170 nm)]3 multilayers were designed with focus on high frequency applications. They were deposited onto glass or a microfluidic system compatible flexible Ciclo Olefin Copolymer substrate and comparatively tested. A maximum sensitivity for the total impedance of 110%/Oe was obtained for a driving current frequency of 30 MHz for [FeNi/Ti]3/Cu (L(cu) = 500 nm)/[Ti/FeNi]3 multilayers deposited onto a glass substrate and 45%/Oe for a driving current frequency of 65 MHz for the same multilayers deposited onto the flexible polymer substrate, a very promising result for applications. The possibility of using flexible substrate/[FeNi/Ti],/Cu/[Ti/FeNi]3 multilayers as MI pressure-sensitive elements was also demonstrated.
设计了磁性[FeNi(170纳米)/Ti(6纳米)]3/Cu(L(cu)=250或500纳米)/[Ti(6纳米)/FeNi(170纳米)]3多层膜,重点关注高频应用。将它们沉积在玻璃或与微流体系统兼容的柔性环烯烃共聚物基板上,并进行了对比测试。对于沉积在玻璃基板上的[FeNi/Ti]3/Cu(L(cu)=500纳米)/[Ti/FeNi]3多层膜,在驱动电流频率为30兆赫兹时,总阻抗的最大灵敏度为110%/奥斯特;对于沉积在柔性聚合物基板上的相同多层膜,在驱动电流频率为65兆赫兹时,总阻抗的最大灵敏度为45%/奥斯特,这对于应用来说是一个非常有前景的结果。还证明了使用柔性基板/[FeNi/Ti]3/Cu/[Ti/FeNi]3多层膜作为磁阻抗压敏元件的可能性。