Laboratory of magnetic sensors, Ural Federal University, Ekaterinburg 620002, Russia.
Pedagogical Institute, Irkutsk State University, Irkutsk 664003, Russia.
Sensors (Basel). 2017 Aug 17;17(8):1900. doi: 10.3390/s17081900.
Permalloy-based thin film structures are excellent materials for sensor applications. Temperature dependencies of the magnetic properties and giant magneto-impedance (GMI) were studied for FeNi-based multilayered structures obtained by the ion-plasma sputtering technique. Selected temperature interval of 25 °C to 50 °C corresponds to the temperature range of functionality of many devices, including magnetic biosensors. A (Cu/FeNi)₅/Cu/(Cu/FeNi)₅ multilayered structure with well-defined traverse magnetic anisotropy showed an increase in the GMI ratio for the total impedance and its real part with temperature increased. The maximum of the GMI of the total impedance ratio ΔZ/Z = 56% was observed at a frequency of 80 MHz, with a sensitivity of 18%/Oe, and the maximum GMI of the real part ΔR/R = 170% at a frequency of 10 MHz, with a sensitivity of 46%/Oe. As the magnetization and direct current electrical resistance vary very little with the temperature, the most probable mechanism of the unexpected increase of the GMI sensitivity is the stress relaxation mechanism associated with magnetoelastic anisotropy.
基于坡莫合金的薄膜结构是用于传感器应用的优秀材料。通过离子束溅射技术获得的 FeNi 基多层结构的磁性能和巨磁阻抗(GMI)的温度依赖性进行了研究。选择的 25°C 至 50°C 的温度区间对应于许多设备的功能温度范围,包括磁性生物传感器。具有明确的横向磁各向异性的 (Cu/FeNi)₅/Cu/(Cu/FeNi)₅ 多层结构,其总阻抗和实部的 GMI 比值随温度升高而增加。在 80 MHz 频率下,总阻抗比 ΔZ/Z 的最大 GMI 为 56%,灵敏度为 18%/Oe,在 10 MHz 频率下,实部 ΔR/R 的最大 GMI 为 170%,灵敏度为 46%/Oe。由于磁化强度和直流电阻随温度变化很小,因此 GMI 灵敏度意外增加的最可能机制是与磁弹各向异性相关的应力松弛机制。