Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, 1 University Station C2200, Austin, Texas 78712, USA.
Nano Lett. 2012 Nov 14;12(11):5679-83. doi: 10.1021/nl302870x. Epub 2012 Oct 26.
Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.
通过化学气相沉积 (CVD) 在金属上生长并转移到任意衬底上的多晶石墨烯具有线缺陷和不连续性，例如褶皱、波纹和折叠，这会通过载流子的散射对石墨烯的输运性质产生不利影响。研究发现，由金属纳米线 (NWs) 组装的石墨烯可以显著降低石墨烯薄膜的电阻。已经获得并测试了具有与石墨烯本征电阻相当的面电阻的石墨烯/NW 薄膜，作为替代电致变色 (EC) 器件中的氧化铟锡 (ITO) 薄膜的透明电极。将这种石墨烯/NW 薄膜成功集成到 EC 器件中证明了它们在各种光电设备应用中的潜力。
