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室温溶液处理制备的铜(I)硫氰酸根（CuSCN）薄膜中的电场诱导空穴传输。

Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room temperature.

机构信息

Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK.

出版信息

Chem Commun (Camb). 2013 May 14;49(39):4154-6. doi: 10.1039/c2cc37065d. Epub 2012 Dec 5.

DOI:10.1039/c2cc37065d
PMID:23223555
Abstract

The optical, structural and charge transport properties of solution-processed films of copper(I) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ~20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm(2) V(-1) s(-1).

摘要

本工作研究了铜（I）硫氰酸盐（CuSCN）溶液处理薄膜的光学、结构和电荷输运性能。发现未经处理的约 20nm 厚的 CuSCN 薄膜为纳米晶态，高度透明，并具有本征空穴传输特性，在 0.01-0.1cm(2)V(-1)s(-1)范围内的最大场效应迁移率。

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