Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois, Urbana, IL 61801, USA.
Nanotechnology. 2013 Jan 25;24(3):035304. doi: 10.1088/0957-4484/24/3/035304. Epub 2012 Dec 21.
Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via the Au-catalyzed vapor-liquid-solid mechanism using metal organic chemical vapor deposition. The nanowire geometry and growth direction are examined using scanning electron microscopy and x-ray microdiffraction. A hypothesis relating the planar nanowire growth direction to the surface projections of [111] B crystal directions is proposed. GaAs planar nanowire growth on vicinal substrates is performed to test this hypothesis. Good agreement between the experimental results and the projection model is found.
平面 GaAs 纳米线通过使用金属有机化学气相沉积的 Au 催化气-液-固机制在各种取向的 GaAs 衬底上外延生长。使用扫描电子显微镜和 X 射线微衍射检查纳米线的几何形状和生长方向。提出了一个关于平面纳米线生长方向与[111]B 晶向的表面投影关系的假说。在斜切衬底上进行 GaAs 平面纳米线生长以验证该假说。实验结果与投影模型吻合较好。
