Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
Nano Lett. 2014 Jan 8;14(1):326-32. doi: 10.1021/nl404085a. Epub 2013 Dec 18.
With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for convenient device processing, and gold-free for compatibility with standard complementary metal-oxide-semiconductor (CMOS) processing tools. Here we demonstrate large area vertical GaAsxSb1-x nanowire arrays grown on silicon (111) by molecular beam epitaxy. The nanowires' complex faceting, pure zinc blende crystal structure, and composition are mapped using characterization techniques both at the nanoscale and in large-area ensembles. We prove unambiguously that these gold-free nanowires are entirely twin-free down to the first bilayer and reveal their three-dimensional composition evolution, paving the way for novel infrared devices integrated directly on the cost-effective Si platform.
随着 III-V 纳米线研究的不断成熟，对材料质量的期望也应相应提高。理想情况下，集成在硅上的 III-V 纳米线应完全不含扩展的平面缺陷，如孪晶、层错或多型性，应进行位置控制以方便器件加工，并且不含金以与标准互补金属氧化物半导体 (CMOS) 处理工具兼容。在这里，我们通过分子束外延展示了在硅 (111) 上生长的大面积垂直 GaAsxSb1-x 纳米线阵列。使用纳米尺度和大面积组件的表征技术，对纳米线的复杂成核、纯闪锌矿晶体结构和组成进行了映射。我们明确证明了这些无金纳米线完全没有孪晶，直至第一层，揭示了它们的三维组成演变，为直接集成在具有成本效益的 Si 平台上的新型红外器件铺平了道路。
