Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305, USA.
Nano Lett. 2013 Feb 13;13(2):374-7. doi: 10.1021/nl303510h. Epub 2013 Jan 25.
In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device may provide new opportunities for integration of optical interconnects between on-chip electrical subsystems.
在这封信件中，我们报告了一种由具有发光和光电导能力的 GaN 纳米线组成的双纳米线器件的制造、器件特性和光学耦合。轴向 p-n 结 GaN 纳米线通过分子束外延生长，转移到非本征衬底上，并选择性地接触，形成离散的光源或探测器纳米线组件。该器件演示的光学耦合可能为在芯片上的电子子系统之间集成光学互连提供新的机会。
