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垂直排列石墨烯的直接生长用于场效应晶体管生物传感器。

Direct growth of vertically-oriented graphene for field-effect transistor biosensor.

机构信息

Department of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, WI 53211, USA.

出版信息

Sci Rep. 2013;3:1696. doi: 10.1038/srep01696.

Abstract

A sensitive and selective field-effect transistor (FET) biosensor is demonstrated using vertically-oriented graphene (VG) sheets labeled with gold nanoparticle (NP)-antibody conjugates. VG sheets are directly grown on the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sensing channel. The protein detection is accomplished through measuring changes in the electrical signal from the FET sensor upon the antibody-antigen binding. The novel biosensor with unique graphene morphology shows high sensitivity (down to ~2 ng/ml or 13 pM) and selectivity towards specific proteins. The PECVD growth of VG presents a one-step and reliable approach to prepare graphene-based electronic biosensors.

摘要

一种灵敏且选择性的场效应晶体管(FET)生物传感器,使用垂直排列的石墨烯(VG)片和标记有金纳米颗粒(NP)-抗体结合物的方法进行展示。VG 片通过等离子体增强化学气相沉积(PECVD)方法直接在传感器电极上生长,用作传感通道。通过测量 FET 传感器在抗体-抗原结合后电信号的变化来完成蛋白质检测。具有独特石墨烯形态的新型生物传感器对特定蛋白质具有高灵敏度(低至约 2ng/ml 或 13pM)和选择性。PECVD 生长的 VG 为制备基于石墨烯的电子生物传感器提供了一种简单可靠的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dbdb/3631944/12fd9b8152c6/srep01696-f1.jpg

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