Li Shandong, Liu Ming, Lou J, Xing X, Qiu Jie, Lin Jianhua, Cai Zhiyi, Xu Feng, Sun Nian X, Duh Jenq-Gong
College of Physics Science, Qingdao University, Qingdao 266071, China.
J Nanosci Nanotechnol. 2013 Feb;13(2):1182-5. doi: 10.1166/jnn.2013.6050.
Nanocrystalline Co2MnSi Heusler alloy films were deposited on the PZN-PT substrates by a composition gradient sputtering method. It is revealed that this multiferroic heterostructure shows very strong magnetoelectric coupling, leading to continuously tunable microwave frequency characteristics by electric field. With the increase of electric field intensity from 0 to 6 kV/cm, the magnetic anisotropy field H(K) increases from 90 Oe to 182 Oe with an increment of 102%, corresponding to a ME coefficient of 15.3 Oe cm/kV; the ferromagnetic resonance frequency f(FMR) shifts from 3.38 to 4.82 GHz with an increment of deltaf(FMR) = 1440 MHz or deltaf(FMR)/f(FMR) = 43%; moreover, the damping constant alpha dramatically decreases from 0.035 to 0.018. These merits demonstrate that this nanocomposite multiferroic structure is promising in fabrication of tunable microwave components.
采用成分梯度溅射法在PZN - PT衬底上沉积了纳米晶Co2MnSi赫斯勒合金薄膜。结果表明，这种多铁性异质结构表现出非常强的磁电耦合，可通过电场实现连续可调的微波频率特性。随着电场强度从0增加到6 kV/cm，磁各向异性场H(K)从90 Oe增加到182 Oe，增量为102%，对应磁电系数为15.3 Oe cm/kV；铁磁共振频率f(FMR)从3.38 GHz移至4.82 GHz，增量为deltaf(FMR)=1440 MHz或deltaf(FMR)/f(FMR)=43%；此外，阻尼常数α从0.035显著降低至0.018。这些优点表明，这种纳米复合多铁性结构在可调谐微波元件制造方面具有前景。
