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不同衬底温度下直流反应磁控溅射制备钒掺杂ZnO薄膜的研究

Study of vanadium doped ZnO films prepared by dc reactive magnetron sputtering at different substrate temperatures.

作者信息

Meng Lijian, Teixeira Vasco, Dos Santos M P

机构信息

Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr António Bernardino de Almeida 431, 4200-072 Porto, Portugal.

出版信息

J Nanosci Nanotechnol. 2013 Feb;13(2):1381-4. doi: 10.1166/jnn.2013.6053.

DOI:10.1166/jnn.2013.6053
PMID:23646642
Abstract

ZnO films doped with vanadium (ZnO:V) have been prepared by dc reactive magnetron sputtering technique at different substrate temperatures (RT-500 degrees C). The effects of the substrate temperature on ZnO:V films properties have been studied. XRD measurements show that only ZnO polycrystalline structure has been obtained, no V2O5 or VO2 crystal phase can be observed. It has been found that the film prepared at low substrate temperature has a preferred orientation along the (002) direction. As the substrate temperature is increased, the (002) peak intensity decreases. When the substrate temperature reaches the 500 degrees C, the film shows a random orientation. SEM measurements show a clear formation of the nano-grains in the sample surface when the substrate temperature is higher than 400 degrees C. The optical properties of the films have been studied by measuring the specular transmittance. The refractive index has been calculated by fitting the transmittance spectra using OJL model combined with harmonic oscillator.

摘要

通过直流反应磁控溅射技术,在不同的衬底温度(室温 - 500摄氏度)下制备了掺钒的氧化锌薄膜(ZnO:V)。研究了衬底温度对ZnO:V薄膜性能的影响。X射线衍射测量表明,仅获得了ZnO多晶结构,未观察到V2O5或VO2晶相。已发现,在低衬底温度下制备的薄膜沿(002)方向具有择优取向。随着衬底温度升高,(002)峰强度降低。当衬底温度达到500摄氏度时,薄膜呈现随机取向。扫描电子显微镜测量表明,当衬底温度高于400摄氏度时,样品表面明显形成了纳米颗粒。通过测量镜面透射率研究了薄膜的光学性能。使用OJL模型结合谐振子对透射光谱进行拟合来计算折射率。

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