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衬底温度对直流磁控溅射VO薄膜结构、光学及电学性能的影响

Effect of Substrate Temperature on the Structural, Optical and Electrical Properties of DC Magnetron Sputtered VO Thin Films.

作者信息

Zhang Chunzi, Gunes Ozan, Wen Shi-Jie, Yang Qiaoqin, Kasap Safa

机构信息

Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9, Canada.

Cisco Systems Inc., 170 West Tasman Drive, San Jose, CA 95134, USA.

出版信息

Materials (Basel). 2022 Nov 7;15(21):7849. doi: 10.3390/ma15217849.

DOI:10.3390/ma15217849
PMID:36363441
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9657141/
Abstract

This study focuses on the effect of the substrate temperature () on the quality of VO thin films prepared by DC magnetron sputtering. was varied from 350 to 600 °C and the effects on the surface morphology, microstructure, optical and electrical properties of the films were investigated. The results show that below 500 °C favors the growth of VO phase, whereas higher (≥500 °C) facilitates the formation of the VO phase. Optical characterization of the as-prepared VO films displayed a reduced optical transmittance (T˜) across the near-infrared region (NIR), reduced phase transition temperature (), and broadened hysteresis width (Δ) through the phase transition region. In addition, a decline of the luminous modulation (ΔT˜lum) and solar modulation (ΔT˜sol) efficiencies of the as-prepared films have been determined. Furthermore, compared with the high-quality films reported previously, the electrical conductivity () as a function of temperature () reveals reduced conductivity contrast (Δ) between the insulating and metallic phases of the VO films, which was of the order of 2. These outcomes indicated the presence of defects and unrelaxed lattice strain in the films. Further, the comparison of present results with those in the literature from similar works show that the preparation of high-quality films at lower than 650 °C presents significant challenges.

摘要

本研究聚焦于衬底温度（）对直流磁控溅射制备的VO薄膜质量的影响。衬底温度在350至600℃之间变化，并研究其对薄膜表面形貌、微观结构、光学和电学性能的影响。结果表明，低于500℃有利于VO相的生长，而较高的温度（≥500℃）则促进VO相的形成。所制备的VO薄膜的光学表征显示，在近红外区域（NIR）的光学透过率（T˜）降低，相变温度（）降低，并且在相变区域的滞后宽度（Δ）变宽。此外，还测定了所制备薄膜的发光调制效率（ΔT˜lum）和太阳调制效率（ΔT˜sol）的下降。此外，与先前报道的高质量薄膜相比，电导率（）作为温度（）的函数表明，VO薄膜绝缘相和金属相之间的电导率对比度（Δ）降低，约为2。这些结果表明薄膜中存在缺陷和未松弛的晶格应变。此外，将目前的结果与类似工作的文献结果进行比较表明，在低于650℃的温度下制备高质量薄膜存在重大挑战。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd97/9657141/f82e67661b82/materials-15-07849-g014.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd97/9657141/2de29aa3cfa2/materials-15-07849-g008.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd97/9657141/a97293eb6caf/materials-15-07849-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd97/9657141/d54ef79c998e/materials-15-07849-g011.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd97/9657141/f82e67661b82/materials-15-07849-g014.jpg

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