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通过去除绝缘体实现的金属-绝缘体-硅-绝缘体-金属波导的特性及纳米通道制造

Characterizations of realized metal-insulator-silicon-insulator-metal waveguides and nanochannel fabrication via insulator removal.

作者信息

Kwon Min-Suk, Shin Jin-Soo, Shin Sang-Yung, Lee Wan-Gyu

机构信息

School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Eonyang-eup, Ulju-gun, Ulsan 689-798, South Korea.

出版信息

Opt Express. 2012 Sep 24;20(20):21875-87. doi: 10.1364/OE.20.021875.

DOI:10.1364/OE.20.021875
PMID:23037337
Abstract

We investigate experimentally metal-insulator-silicon-insulator-metal (MISIM) waveguides that are fabricated by using fully standard CMOS technology. They are hybrid plasmonic waveguides, and they have a feature that their insulator is replaceable with functional material. We explain a fabrication process for them and discuss fabrication results based on 8-inch silicon-on-insulator wafers. We measured the propagation characteristics of the MISIM waveguides that were actually fabricated to be connected to Si photonic waveguides through symmetric and asymmetric couplers. When incident light from an optical source has transverse electric (TE) polarization and its wavelength is 1318 or 1554 nm, their propagation losses are between 0.2 and 0.3 dB/μm. Excess losses due to the symmetric couplers are around 0.5 dB, which are smaller than those due to the asymmetric couplers. Additional measurement results indicate that the MISIM waveguide supports a TE-polarized hybrid plasmonic mode. Finally, we explain a process of removing the insulator without affecting the remaining MISIM structure to fabricate ~30-nm-wide nanochannels which may be filled with functional material.

摘要

我们通过实验研究了采用完全标准的互补金属氧化物半导体(CMOS)技术制造的金属 - 绝缘体 - 硅 - 绝缘体 - 金属(MISIM)波导。它们是混合等离子体波导,具有绝缘体可用功能材料替代的特性。我们阐述了其制造工艺,并基于8英寸绝缘体上硅晶圆讨论了制造结果。我们测量了实际制造的通过对称和非对称耦合器连接到硅光子波导的MISIM波导的传播特性。当来自光源的入射光具有横向电(TE)偏振且其波长为1318或1554纳米时,它们的传播损耗在0.2至0.3分贝/微米之间。对称耦合器引起的额外损耗约为0.5分贝,比非对称耦合器引起的损耗小。额外的测量结果表明,MISIM波导支持TE偏振的混合等离子体模式。最后,我们解释了在不影响其余MISIM结构的情况下去除绝缘体以制造可填充功能材料的约30纳米宽纳米通道的过程。

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