Ariño G, Chmeissani M, De Lorenzo G, Puigdengoles C, Cabruja E, Calderón Y, Kolstein M, Macias-Montero J G, Martinez R, Mikhaylova E, Uzun D
Institut de Física d'Altes Energies (IFAE), Universitat Autònoma de Barelona (UAB), 08193 Bellaterra (Barcelona), Spain.
J Instrum. 2013 Feb;8. doi: 10.1088/1748-0221/8/02/C02015.
We report on the characterization of 2 mm thick CdTe diode detector with Schottky contacts to be employed in a novel conceptual design of PET scanner. Results at -8°C with an applied bias voltage of -1000 V/mm show a 1.2% FWHM energy resolution at 511 keV. Coincidence time resolution has been measured by triggering on the preamplifier output signal to improve the timing resolution of the detector. Results at the same bias and temperature conditions show a FWHM of 6 ns with a minimum acceptance energy of 500 keV. These results show that pixelated CdTe Schottky diode is an excellent candidate for the development of next generation nuclear medical imaging devices such as PET, Compton gamma cameras, and especially PET-MRI hybrid systems when used in a magnetic field immune configuration.
我们报告了一种用于正电子发射断层扫描（PET）扫描仪新型概念设计的、具有肖特基接触的2毫米厚碲化镉（CdTe）二极管探测器的特性。在-8°C、-1000 V/mm的外加偏置电压下，结果显示在511 keV时能量分辨率为1.2%半高宽（FWHM）。通过对前置放大器输出信号进行触发来测量符合时间分辨率，以提高探测器的时间分辨率。在相同偏置和温度条件下的结果显示，半高宽为6 ns，最小可接受能量为500 keV。这些结果表明，像素化的CdTe肖特基二极管在用于磁场免疫配置时，是开发下一代核医学成像设备（如PET、康普顿伽马相机，尤其是PET-MRI混合系统）的极佳候选者。
