基于绝缘体上硅的高 pH 敏纳米线场效应晶体管。
A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator.
机构信息
Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow 119991, Russia ; Laboratory of Cryoelectronics, Lomonosov Moscow State University, Moscow 119991, Russia.
出版信息
Beilstein J Nanotechnol. 2013 May 28;4:330-5. doi: 10.3762/bjnano.4.38. Print 2013.
BACKGROUND
An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.
RESULTS
A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode.
CONCLUSION
The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.
背景
通过与 CMOS 兼容的方法，对绝缘体上硅材料的硅纳米线场效应晶体管进行了实验和理论研究。
结果
实验得到了对 pH 值变化的最大纳斯特灵敏度为 59 mV/pH。在亚阈值模式下，传感器的最大电荷灵敏度估计为千分之一电子电荷量。
结论
我们采用与 CMOS 兼容的自上而下方法制造的传感器所获得的灵敏度并不逊于采用自下而上方法制造的传感器。这为开发具有片上初级信号处理功能的与 CMOS 兼容的探头提供了良好的基础。
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