Laboratory of Theoretical Chemistry, Department of Chemistry, University of Maragheh, Maragheh, 55138-64596, Iran.
J Mol Model. 2013 Sep;19(9):3767-77. doi: 10.1007/s00894-013-1912-y. Epub 2013 Jun 23.
A quantum chemistry study was carried out to investigate the strength and nature of halogen bond interactions in HXeH···XCCY complexes, where X = Cl, Br and Y = H, F, Cl, Br, CN, NC, C2H, CH3, OH, SH, NH2. Examination of the electrostatic potentials V(r) of the XCCY molecules reveals that the addition of substituents has a significant effect upon the most positive electrostatic potential on the surface of the interacting halogen atom. We found that the magnitude of atomic charges and multipole moments depends upon the halogen atom X and is rather sensitive to the electron-withdrawing/donating power of the remainder of the molecule. An excellent correlation was found between the most positive electrostatic potentials on the halogen atom and the interaction energies. For either HXeH···ClCCY or HXeH···BrCCY complexes, an approximate linear correlation between the interaction energies and halogens multipole moments are established, indicating that the electrostatic and polarization interactions are responsible for the stability of the complexes. According to energy decomposition analysis, it is revealed that the electrostatic interactions are the major source of the attraction in the HXeH···XCCY complexes. Furthermore, the changes in the electrostatic term are mainly responsible for the dependence of interaction energy on the halogen atom.
采用量子化学方法研究了 HXeH···XCCY 复合物中卤素键相互作用的强度和本质,其中 X = Cl、Br,Y = H、F、Cl、Br、CN、NC、C2H、CH3、OH、SH、NH2。对 XCCY 分子的静电势 V(r)的研究表明,取代基的添加对相互作用卤素原子表面的最正静电势有显著影响。我们发现原子电荷和多极矩的大小取决于卤素原子 X,并且对分子其余部分的吸电子/供电子能力相当敏感。在卤素原子上的最正静电势和相互作用能之间发现了极好的相关性。对于 HXeH···ClCCY 或 HXeH···BrCCY 复合物,建立了相互作用能和卤素多极矩之间的近似线性相关性,表明静电和极化相互作用是复合物稳定性的原因。根据能量分解分析,揭示了静电相互作用是 HXeH···XCCY 复合物吸引力的主要来源。此外,静电项的变化主要负责相互作用能对卤素原子的依赖性。