纳米级晶体缺陷诱导具有不同晶体织构的锰氧化物纳米层的特性变化。

Nanoscale crystal imperfection-induced characterization changes of manganite nanolayers with various crystallographic textures.

机构信息

Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan.

出版信息

Nanoscale Res Lett. 2013 Aug 6;8(1):345. doi: 10.1186/1556-276X-8-345.

DOI:10.1186/1556-276X-8-345

PMID:23919442

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3765240/

Abstract

(La,Sr)MnO3 (LSMO) nanolayers with various crystallographic textures were grown on the sapphire substrate with and without In2O3 epitaxial buffering. The LSMO nanolayer with In2O3 epitaxial buffering has a (110) preferred orientation. However, the nanolayer without buffering shows a highly (100)-oriented texture. Detailed microstructure analyses show that the LSMO nanolayer with In2O3 epitaxial buffering has a high degree of nanoscale disordered regions (such as subgrain boundaries and incoherent heterointerfaces) in the film. These structural inhomogeneities caused a low degree of ferromagnetic ordering in LSMO with In2O3 epitaxial buffering, which leads to a lower saturation magnetization value and Curie temperature, and higher coercivity and resistivity.

摘要

（La，Sr）MnO3（LSMO）纳米层具有不同的晶体织构，在有和没有 In2O3 外延缓冲层的蓝宝石衬底上生长。具有 In2O3 外延缓冲层的 LSMO 纳米层具有（110）择优取向。然而，没有缓冲层的纳米层表现出高度（100）取向的织构。详细的微观结构分析表明，具有 In2O3 外延缓冲层的 LSMO 纳米层在薄膜中具有高度的纳米级无序区域（如亚晶粒界和非相干异质界面）。这些结构不均匀性导致具有 In2O3 外延缓冲层的 LSMO 中磁有序程度较低，从而导致较低的饱和磁化强度值和居里温度，以及较高的矫顽力和电阻率。