Institute of Materials Engineering, National Taiwan Ocean University, Keelung 20224, Taiwan.
Nanoscale Res Lett. 2013 Aug 6;8(1):345. doi: 10.1186/1556-276X-8-345.
(La,Sr)MnO3 (LSMO) nanolayers with various crystallographic textures were grown on the sapphire substrate with and without In2O3 epitaxial buffering. The LSMO nanolayer with In2O3 epitaxial buffering has a (110) preferred orientation. However, the nanolayer without buffering shows a highly (100)-oriented texture. Detailed microstructure analyses show that the LSMO nanolayer with In2O3 epitaxial buffering has a high degree of nanoscale disordered regions (such as subgrain boundaries and incoherent heterointerfaces) in the film. These structural inhomogeneities caused a low degree of ferromagnetic ordering in LSMO with In2O3 epitaxial buffering, which leads to a lower saturation magnetization value and Curie temperature, and higher coercivity and resistivity.
（La，Sr）MnO3（LSMO）纳米层具有不同的晶体织构，在有和没有 In2O3 外延缓冲层的蓝宝石衬底上生长。具有 In2O3 外延缓冲层的 LSMO 纳米层具有（110）择优取向。然而，没有缓冲层的纳米层表现出高度（100）取向的织构。详细的微观结构分析表明，具有 In2O3 外延缓冲层的 LSMO 纳米层在薄膜中具有高度的纳米级无序区域（如亚晶粒界和非相干异质界面）。这些结构不均匀性导致具有 In2O3 外延缓冲层的 LSMO 中磁有序程度较低，从而导致较低的饱和磁化强度值和居里温度，以及较高的矫顽力和电阻率。
