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聚焦离子束铣削在金属和电子材料中的非晶化诱导。

Amorphization induced by focused ion beam milling in metallic and electronic materials.

机构信息

Center for Analysis and Assessment, Research Institute of Industrial Science and Technology, Pohang 790-330, Republic of Korea.

出版信息

Microsc Microanal. 2013 Aug;19 Suppl 5:33-7. doi: 10.1017/S1431927613012282.

DOI:10.1017/S1431927613012282
PMID:23920170
Abstract

Focused ion beam (FIB) milling using high-energy gallium ions is widely used in the preparation of specimens for transmission electron microscopy (TEM). However, the energetic ion beam induces amorphization on the edge of specimens during milling, resulting in a mischievous influence on the clearness of high-quality transmission electron micrographs. In this work, the amorphization induced by the FIB milling was investigated by TEM for three kinds of materials, metallic materials in bulk shape, and semiconductive and electronic ceramic materials as a substrate for the deposition of thin films.

摘要

聚焦离子束(FIB)铣削使用高能镓离子,广泛用于制备透射电子显微镜(TEM)的试样。然而,高能离子束在铣削过程中使试样边缘非晶化,对高质量透射电子显微照片的清晰度产生有害影响。在这项工作中,通过 TEM 研究了 FIB 铣削对三种材料的非晶化诱导作用,这三种材料分别是块状金属材料、半导体和电子陶瓷材料作为薄膜沉积的衬底。

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