在高度有序的热解石墨上沉积的高度均匀的/DNA/1,3-二氨基丙烷薄膜中，由 10 eV 电子诱导的超螺旋拓扑结构的完全截面。
Absolute cross section for loss of supercoiled topology induced by 10 eV electrons in highly uniform /DNA/1,3-diaminopropane films deposited on highly ordered pyrolitic graphite.
机构信息
Laboratoire de Chimie Physique et Rayonnements - Alain Chambaudet, LRC CEA, UMR CNRS 6249, Université de Franche-Comté, 16 route de Gray, F-25030 Besançon cedex, France.
出版信息
J Chem Phys. 2013 Aug 7;139(5):055104. doi: 10.1063/1.4817323.
Abstract
It was recently shown that the affinity of doubly charged, 1-3 diaminopropane (Dap(2+)) for DNA permits the growth on highly ordered pyrolitic graphite (HOPG) substrates, of plasmid DNA films, of known uniform thickness [O. Boulanouar, A. Khatyr, G. Herlem, F. Palmino, L. Sanche, and M. Fromm, J. Phys. Chem. C 115, 21291-21298 (2011)]. Post-irradiation analysis by electrophoresis of such targets confirms that electron impact at 10 eV produces a maximum in the yield of single strand breaks that can be associated with the formation of a DNA(-) transient anion. Using a well-adapted deterministic survival model for the variation of electron damage with fluence and film thickness, we have determined an absolute cross section for strand-break damage by 10 eV electrons and inelastic scattering attenuation length in DNA-Dap complex films.
摘要
最近的研究表明，二价 1,3-二氨基丙烷（Dap(2+)）与 DNA 的亲和力允许在高度有序的热解石墨（HOPG）基底上生长具有已知均匀厚度的质粒 DNA 薄膜[O. Boulanouar, A. Khatyr, G. Herlem, F. Palmino, L. Sanche, and M. Fromm, J. Phys. Chem. C 115, 21291-21298 (2011)]。通过对这些靶标的电泳后辐照分析证实，在 10 eV 的电子冲击下会产生单链断裂产额的最大值，这可以与 DNA(-)瞬态阴离子的形成相关联。使用适用于电子损伤随剂量和薄膜厚度变化的确定性生存模型，我们已经确定了 10 eV 电子和非弹性散射衰减长度在 DNA-Dap 复合物薄膜中的链断裂损伤的绝对截面。
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