Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
Nano Lett. 2013 Sep 11;13(9):4351-5. doi: 10.1021/nl402150r. Epub 2013 Aug 19.
Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (<10(-5) Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.
无处不在的低频 1/f 噪声可能是限制纳米器件性能和应用的一个因素。在这里，我们定量研究了单层过渡金属二卤化物 MoS2 场效应晶体管中的低频电子噪声。用迁移率涨落的经验公式可以解释测量到的 1/f 噪声，霍尔系数在真空中的范围为 0.005 到 2.0（<10(-5) 托）。在环境条件下，场效应迁移率下降，噪声幅度增加了一个数量级，这表明大气吸附物对电荷输运有显著影响。此外，当器件从 300 降至 6.5 K 时，我们观察到单洛伦兹产生-复合噪声增加了一个数量级。
