Zhang Bing, Hu Congzhen, Xin Youze, Li Yaoxin, Xie Yiyun, Xing Qian, Guo Zhuoqi, Xue Zhongming, Li Dan, Zhang Guohe, Geng Li, Ke Zungui, Wang Chi
School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an 710049, China.
Nanomaterials (Basel). 2022 Apr 12;12(8):1325. doi: 10.3390/nano12081325.
Low-frequency electronic noise is an important parameter used for the electronic and sensing applications of transistors. Here, we performed a systematic study on the low-frequency noise mechanism for both p-channel and n-channel MoTe field-effect transistors (FET) at different temperatures, finding that low-frequency noise for both p-type and n-type conduction in MoTe devices come from the variable range hopping (VRH) transport process where carrier number fluctuations (CNF) occur. This process results in the broad distribution of the waiting time of the carriers between successive hops, causing the noise to increase as the temperature decreases. Moreover, we found the noise magnitude for p-type MoTe FET hardly changed after exposure to the ambient conditions, whereas for n-FET, the magnitude increased by nearly one order. These noise characteristics may provide useful guidelines for developing high-performance electronics based on the emerging transition metal dichalcogenides.
低频电子噪声是用于晶体管的电子和传感应用的一个重要参数。在此，我们对不同温度下p沟道和n沟道碲化钼场效应晶体管（FET）的低频噪声机制进行了系统研究，发现碲化钼器件中p型和n型传导的低频噪声均来自可变范围跳跃（VRH）传输过程，在此过程中会发生载流子数涨落（CNF）。这个过程导致载流子在连续跳跃之间的等待时间分布很广，使得噪声随温度降低而增加。此外，我们发现p型碲化钼FET在暴露于环境条件后噪声幅度几乎不变，而对于n-FET，其幅度增加了近一个数量级。这些噪声特性可为基于新兴过渡金属二硫属化物开发高性能电子产品提供有用的指导。
