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钯催化芳基卤化物与乙烯基烷氧基硅烷在水中的乙烯基化反应的机理研究:溶剂和氢氧化钠促进剂的影响。

Mechanistic studies on the Pd-catalyzed vinylation of aryl halides with vinylalkoxysilanes in water: the effect of the solvent and NaOH promoter.

机构信息

Departamento de Química Orgánica y Química Inorgánica, Universidad de Alcalá , Edificio de Farmacia, Campus Universitario, E28871 Alcalá de Henares, Madrid, Spain.

出版信息

J Am Chem Soc. 2013 Sep 18;135(37):13749-63. doi: 10.1021/ja404255u. Epub 2013 Sep 10.

DOI:10.1021/ja404255u
PMID:23968504
Abstract

The mechanism of the Pd-catalyzed vinylation of aryl halides with vinylalkoxysilanes in water has been studied using different catalytic precursors. The NaOH promoter converts the initial vinylalkoxysilane into a highly reactive water-soluble vinylsilanolate species. Similarly, deuterium-labeling experiments have shown that, irrespective of the catalytic precursor used, vinylation occurs exclusively at the CH vinylic functionality via a Heck reaction and not at the C-Si bond via a Hiyama cross-coupling. The involvement of a Heck mechanism is interpreted in terms of the reduced nucleophilicity of the base in water, which disfavors the transmetalation step. The Heck product (β-silylvinylarene) undergoes partial desilylation, with formation of a vinylarene, by three different routes: (a) hydrolytic desilylation by the aqueous solvent (only at high temperature); (b) transmetalation of the silyl olefin on the PdH Heck intermediate followed by reductive elimination of vinylarene; (c) reinsertion of the silyl olefin into the PdH bond of the Heck intermediate followed by β-Si syn-elimination. Both the Hiyama and Heck catalytic cycles and desilylation mechanisms b and c have been computationally evaluated for the [Pd(en)Cl2] precursor in water as solvent. The calculated Gibbs energy barriers support the reinsertion route proposed on the basis of the experimental results.

摘要

已经使用不同的催化前体制备研究了 Pd 催化芳基卤化物与乙烯基烷氧基硅烷在水中的乙烯基化反应机理。NaOH 促进剂将初始的乙烯基烷氧基硅烷转化为高反应性的水溶性乙烯硅醇盐物种。同样,氘标记实验表明,无论使用何种催化前体,乙烯基化都通过 Heck 反应仅在 CH 烯丙基官能团上发生,而不是通过 Hiyama 交叉偶联在 C-Si 键上发生。Heck 反应机理的参与可以根据水中碱的亲核性降低来解释,这不利于转金属化步骤。Heck 产物(β-硅基乙烯基芳烃)通过三种不同的途径发生部分脱硅反应,形成乙烯基芳烃:(a)水溶剂的水解脱硅(仅在高温下);(b) Heck 中间体上的硅烯酮的转金属化,随后乙烯基芳烃的还原消除;(c) Heck 中间体的 PdH 键中硅烯酮的重新插入,随后β-Si 顺式消除。Hiyama 和 Heck 催化循环以及脱硅机理 b 和 c 已针对[Pd(en)Cl2]前体在水中作为溶剂进行了计算评估。计算得到的吉布斯能垒支持基于实验结果提出的重新插入途径。

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