Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, P. R. China.
J Am Chem Soc. 2013 Sep 11;135(36):13274-7. doi: 10.1021/ja406351u. Epub 2013 Aug 28.
The controlled production of high-quality atomically thin III-VI semiconductors poses a challenge for practical applications in electronics, optoelectronics, and energy science. Here, we exploit a controlled synthesis of single- and few-layer In2Se3 flakes on different substrates, such as graphene and mica, by van der Waals epitaxy. The thickness, orientation, nucleation site, and crystal phase of In2Se3 flakes were well-controlled by tuning the growth condition. The obtained In2Se3 flakes exhibit either semiconducting or metallic behavior depending on the crystal structures. Meanwhile, field-effect transistors based on the semiconducting In2Se3 flakes showed an efficient photoresponse. The controlled growth of atomically thin In2Se3 flakes with diverse conductivity and efficient photoresponsivity could lead to new applications in photodetectors and phase change memory devices.
控制高质量原子层 III-VI 半导体的生产对电子学、光电学和能源科学中的实际应用提出了挑战。在这里，我们通过范德华外延法，在不同的衬底（如石墨烯和云母）上利用单原子层和少层 In2Se3 薄片的可控合成。通过调整生长条件，可以很好地控制 In2Se3 薄片的厚度、取向、成核位置和晶体相。所获得的 In2Se3 薄片表现出半导体或金属特性，这取决于晶体结构。同时，基于半导体 In2Se3 薄片的场效应晶体管表现出有效的光响应。具有不同电导率和高效光响应的原子层薄 In2Se3 薄片的可控生长可能会导致在光电探测器和相变存储器件中的新应用。
