在石墨烯上原位生长 NiCo(2)S(4) 纳米片用于高性能超级电容器。
In situ growth of NiCo(2)S(4) nanosheets on graphene for high-performance supercapacitors.
机构信息
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
出版信息
Chem Commun (Camb). 2013 Oct 3;49(86):10178-80. doi: 10.1039/c3cc46034g.
PMID:24051902
Abstract
We demonstrate a facile hydrothermal method for growth of ultrathin NiCo2S4 nanosheets on reduced graphene oxide (RGO), which exhibit remarkable electrochemical performance with higher capacitance and longer cycle life than the bare NiCo2S4 hollow spheres (HSs).
摘要
我们展示了一种简便的水热法，用于在还原氧化石墨烯（RGO）上生长超薄的 NiCo2S4 纳米片，与裸 NiCo2S4 空心球（HSs）相比，它们表现出更高的电容和更长的循环寿命等显著的电化学性能。
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