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发热体温揭示支持癫痫发作起始的 Nav1.1 癫痫突变的生物物理缺陷。

Febrile temperatures unmask biophysical defects in Nav1.1 epilepsy mutations supportive of seizure initiation.

机构信息

Department of Medical Genetics, Division of Biomedical Genetics, and 2 Department of Medical Physiology, Division of Heart and Lungs, University Medical Center Utrecht, 3508 AB Utrecht, Netherlands.

出版信息

J Gen Physiol. 2013 Dec;142(6):641-53. doi: 10.1085/jgp.201311042.

Abstract

Generalized epilepsy with febrile seizures plus (GEFS+) is an early onset febrile epileptic syndrome with therapeutic responsive (a)febrile seizures continuing later in life. Dravet syndrome (DS) or severe myoclonic epilepsy of infancy has a complex phenotype including febrile generalized or hemiclonic convulsions before the age of 1, followed by intractable myoclonic, complex partial, or absence seizures. Both diseases can result from mutations in the Nav1.1 sodium channel, and initially, seizures are typically triggered by fever. We previously characterized two Nav1.1 mutants-R859H (GEFS+) and R865G (DS)-at room temperature and reported a mixture of biophysical gating defects that could not easily predict the phenotype presentation as either GEFS+ or DS. In this study, we extend the characterization of Nav1.1 wild-type, R859H, and R865G channels to physiological (37°C) and febrile (40°C) temperatures. At physiological temperature, a variety of biophysical defects were detected in both mutants, including a hyperpolarized shift in the voltage dependence of activation and a delayed recovery from fast and slow inactivation. Interestingly, at 40°C we also detected additional gating defects for both R859H and R865G mutants. The GEFS+ mutant R859H showed a loss of function in the voltage dependence of inactivation and an increased channel use-dependency at 40°C with no reduction in peak current density. The DS mutant R865G exhibited reduced peak sodium currents, enhanced entry into slow inactivation, and increased use-dependency at 40°C. Our results suggest that fever-induced temperatures exacerbate the gating defects of R859H or R865G mutants and may predispose mutation carriers to febrile seizures.

摘要

热性惊厥附加症(GEFS+)是一种早发性热性癫痫综合征,具有治疗反应性(a)热性惊厥,在以后的生活中持续发作。Dravet 综合征(DS)或婴儿严重肌阵挛性癫痫具有复杂的表型,包括 1 岁前的热性全身性或半侧阵挛性惊厥,随后是难治性肌阵挛、复杂部分性或失神发作。这两种疾病都可能是由于 Nav1.1 钠通道的突变引起的,最初,癫痫发作通常是由发热引起的。我们之前在室温下对 Nav1.1 两种突变体 R859H(GEFS+)和 R865G(DS)进行了特征描述,并报告了混合的生物物理门控缺陷,这些缺陷不能轻易预测表型表现为 GEFS+或 DS。在这项研究中,我们将 Nav1.1 野生型、R859H 和 R865G 通道的特性扩展到生理(37°C)和发热(40°C)温度。在生理温度下,两种突变体都检测到多种生物物理缺陷,包括激活的电压依赖性超极化偏移和快速和慢速失活的恢复延迟。有趣的是,在 40°C 时,我们还检测到 R859H 和 R865G 突变体的其他门控缺陷。GEFS+突变体 R859H 在失活的电压依赖性方面表现出功能丧失,并且在 40°C 时通道使用依赖性增加,而峰电流密度没有降低。DS 突变体 R865G 表现出峰值钠电流减少、进入慢速失活增强以及在 40°C 时使用依赖性增加。我们的结果表明,发热引起的温度加剧了 R859H 或 R865G 突变体的门控缺陷,并可能使突变携带者易患热性惊厥。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad74/3840920/9fbce101acf5/JGP_201311042_Fig1.jpg

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