室温下简便制备 n 型还原氧化石墨烯场效应晶体管。

Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature.

机构信息

National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry and Energy Science and SKKU Advanced Institute Nano Technology, Sungkyunkwan University, 2066 Seoburo, Jangan-Gu, Suwon, Gyeonggi-Do 440-746, South Korea.

出版信息

Chem Commun (Camb). 2014 Feb 7;50(10):1224-6. doi: 10.1039/c3cc47224h.

DOI:10.1039/c3cc47224h

PMID:24336690

Abstract

We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.

摘要

我们介绍了一种简便的方法，即在室温下通过使用锂和乙二胺的典型 Benkeser 还原反应来制备 n 型还原氧化石墨烯场效应晶体管。