1] IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA [2].
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Nat Commun. 2014;5:3087. doi: 10.1038/ncomms4087.
Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.
层状过渡金属二卤化物具有广泛的吸引人的物理和化学性质，并且对于各种器件应用具有潜在的重要性。在这里，我们报告了通过化学气相沉积生长的单层二硫化钼的电子输运和器件特性。我们表明，这些器件有可能抑制短沟道效应并具有高临界击穿电场。然而，我们的研究表明，目前这些器件的电子特性受到大量带尾俘获态存在的严重限制。通过电容和交流电导测量，我们系统地量化了这些状态的态密度和响应时间。由于俘获电荷的大量存在，测量的有效迁移率也导致对真实能带迁移率和材料潜力的严重低估。需要对提高样品质量进行持续的工程努力，以实现其潜在应用。
