IEEE Trans Ultrason Ferroelectr Freq Control. 2014 Feb;61(2):231-8. doi: 10.1109/TUFFC.2014.6722609.
This paper presents a voltage-controlled, highquality factor (Q) composite thin-film bulk acoustic resonator (FBAR) at 1.28 GHz. The composite FBAR consists of a thin layer of barium strontium titanate (BST) that is sandwiched between two electrodes deposited on a silicon-on-insulator (SOI) wafer. The BST layer, which has a strong electrostrictive effect, is used for electromechanical transduction by means of its voltage-induced piezoelectricity. The silicon layer, with its low mechanical loss, increases the Q of the resonator. The composite FBAR presented here exhibits Qs exceeding 800 with a resonance frequency and Q product (f × Q) of 1026 GHz.
本文提出了一种工作在 1.28GHz 的电压控制、高品质因数（Q）复合薄膜体声波谐振器（FBAR）。该复合 FBAR 由一层位于绝缘体上硅（SOI）晶圆上沉积的两个电极之间的钛酸钡锶（BST）薄膜组成。BST 层具有很强的电致伸缩效应，通过其电压诱导的压电效应实现机电转换。硅层具有较低的机械损耗，提高了谐振器的 Q 值。本文提出的复合 FBAR 的 Q 值超过 800，其谐振频率和 Q 值乘积（f×Q）为 1026GHz。
